All IGBT. GA125TS120U Datasheet

 

GA125TS120U Datasheet and Replacement


   Type Designator: GA125TS120U
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 125 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 159 nS
   Coesⓘ - Output Capacitance, typ: 989 pF
   Package: MODULE
      - IGBT Cross-Reference

 

GA125TS120U Datasheet (PDF)

 ..1. Size:221K  international rectifier
 ga125ts120u.pdf pdf_icon

GA125TS120U

PD - 50053BGA125TS120U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.2V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 125A HEXFRED antiparallel diodes with ultra- soft

Datasheet: DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , IRG4PC40W , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U .

History: IXSX40N60BD1 | IRG4BC30FD | RJP60V0DPM | GT10G101 | MG300N1US1 | TGAN40N60F2DS | NGTB35N65FL2WG

Keywords - GA125TS120U transistor datasheet

 GA125TS120U cross reference
 GA125TS120U equivalent finder
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