GA125TS120U PDF and Equivalents Search

 

GA125TS120U Specs and Replacement

Type Designator: GA125TS120U

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 625 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 125 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 159 nS

Coesⓘ - Output Capacitance, typ: 989 pF

Package: MODULE

 GA125TS120U Substitution

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GA125TS120U datasheet

 ..1. Size:221K  international rectifier
 ga125ts120u.pdf pdf_icon

GA125TS120U

PD - 50053B GA125TS120U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features VCES = 1200V Generation 4 IGBT technology UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 2.2V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 125A HEXFRED antiparallel diodes with ultra- soft ... See More ⇒

Specs: DG50X07T2, DG75H12T2, DG75X07T2L, DG75X12T2, MSG100D350FHS, MSG100N350FH, GA100TS120U, GA100TS60U, CRG75T65AK5HD, GA150TD120U, GA150TS60U, GA200SA60S, GA200SA60U, GA200TD120U, GA250TD120U, GA250TS60U, GA300TD60U

Keywords - GA125TS120U transistor spec

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