All IGBT. GA125TS120U Datasheet

 

GA125TS120U Datasheet and Replacement


   Type Designator: GA125TS120U
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 125 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 159 nS
   Coesⓘ - Output Capacitance, typ: 989 pF
   Package: MODULE
 

 GA125TS120U substitution

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GA125TS120U Datasheet (PDF)

 ..1. Size:221K  international rectifier
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GA125TS120U

PD - 50053BGA125TS120U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.2V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 125A HEXFRED antiparallel diodes with ultra- soft

Datasheet: DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , XNF15N60T , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U .

History: MSAGX75L60A

Keywords - GA125TS120U transistor datasheet

 GA125TS120U cross reference
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