All IGBT. IGC39T65QE Datasheet

 

IGC39T65QE Datasheet and Replacement


   Type Designator: IGC39T65QE
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.22 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Package: CHIP
      - IGBT Cross-Reference

 

IGC39T65QE Datasheet (PDF)

 ..1. Size:232K  infineon
igc39t65qe.pdf pdf_icon

IGC39T65QE

IGC39T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching

 6.1. Size:66K  infineon
igc39t65t8m.pdf pdf_icon

IGC39T65QE

IGC39T65T8MIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC39T65T8

 6.2. Size:122K  infineon
sigc39t65e.pdf pdf_icon

IGC39T65QE

SIGC39T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC39T65E 650

 7.1. Size:120K  infineon
sigc39t60e.pdf pdf_icon

IGC39T65QE

SIGC39T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC39T60E 600V 75A 6.59 x 5.91 mm2 sawn on foil

Datasheet: IGC50T120T8RL , MIXA20WB1200TED , IGC50T120T6RL , MIXA20WB1200TMH , IGC41T120T8Q , MIXA20WB1200TML , IGC39T65T8M , MIXA30W1200TED , IHW20N135R5 , MIXA30W1200TMH , IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , IGC31T65QE , MIXA40W1200TED , IGC99T120T8RQ .

History: IGC99T120T6RH | DGP10N60CTL

Keywords - IGC39T65QE transistor datasheet

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