IGC39T65QE - Аналоги. Основные параметры
Наименование: IGC39T65QE
Тип транзистора: IGBT
Тип управляющего канала: N
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.22 V @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Тип корпуса: CHIP
Аналог (замена) для IGC39T65QE
Технические параметры IGC39T65QE
igc39t65qe.pdf
IGC39T65QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switching
igc39t65t8m.pdf
IGC39T65T8M IGBT3 Chip Medium Power Features Recommended for 650V Trench & Field Stop technology power modules C high short circuit capability, self limiting short circuit current positive temperature coefficient Applications easy paralleling drives G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC39T65T8
sigc39t65e.pdf
SIGC39T65E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC39T65E 650
sigc39t60e.pdf
SIGC39T60E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC39T60E 600V 75A 6.59 x 5.91 mm2 sawn on foil
Другие IGBT... IGC50T120T8RL , MIXA20WB1200TED , IGC50T120T6RL , MIXA20WB1200TMH , IGC41T120T8Q , MIXA20WB1200TML , IGC39T65T8M , MIXA30W1200TED , IHW20N135R5 , MIXA30W1200TMH , IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , IGC31T65QE , MIXA40W1200TED , IGC99T120T8RQ .
History: BSM600GA120DLC | MG10Q6ES50A | BSM400GA120DN2 | BSM200GA170DN2S | MG06400D-BN4MM | MBN600GR12A | MG1225H-XN2MM
History: BSM600GA120DLC | MG10Q6ES50A | BSM400GA120DN2 | BSM200GA170DN2S | MG06400D-BN4MM | MBN600GR12A | MG1225H-XN2MM
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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