IGC39T65QE - аналоги и описание IGBT

 

IGC39T65QE - Аналоги. Основные параметры


   Наименование: IGC39T65QE
   Тип транзистора: IGBT
   Тип управляющего канала: N
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.22 V @25℃
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   Тип корпуса: CHIP
 

 Аналог (замена) для IGC39T65QE

   - подбор ⓘ IGBT транзистора по параметрам

 

Технические параметры IGC39T65QE

 ..1. Size:232K  infineon
igc39t65qe.pdfpdf_icon

IGC39T65QE

IGC39T65QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switching

 6.1. Size:66K  infineon
igc39t65t8m.pdfpdf_icon

IGC39T65QE

IGC39T65T8M IGBT3 Chip Medium Power Features Recommended for 650V Trench & Field Stop technology power modules C high short circuit capability, self limiting short circuit current positive temperature coefficient Applications easy paralleling drives G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC39T65T8

 6.2. Size:122K  infineon
sigc39t65e.pdfpdf_icon

IGC39T65QE

SIGC39T65E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC39T65E 650

 7.1. Size:120K  infineon
sigc39t60e.pdfpdf_icon

IGC39T65QE

SIGC39T60E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC39T60E 600V 75A 6.59 x 5.91 mm2 sawn on foil

Другие IGBT... IGC50T120T8RL , MIXA20WB1200TED , IGC50T120T6RL , MIXA20WB1200TMH , IGC41T120T8Q , MIXA20WB1200TML , IGC39T65T8M , MIXA30W1200TED , IHW20N135R5 , MIXA30W1200TMH , IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , IGC31T65QE , MIXA40W1200TED , IGC99T120T8RQ .

History: BSM600GA120DLC | MG10Q6ES50A | BSM400GA120DN2 | BSM200GA170DN2S | MG06400D-BN4MM | MBN600GR12A | MG1225H-XN2MM

 

 
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