IGC99T120T6RL IGBT. Datasheet pdf. Equivalent
Type Designator: IGC99T120T6RL
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
Coesⓘ - Output Capacitance, typ: 405 pF
Package: CHIP
IGC99T120T6RL Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGC99T120T6RL Datasheet (PDF)
igc99t120t6rl.pdf
IGC99T120T6RL IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC99T120T6RL 1200V 100A 10.39 x 9.5 mm2 sawn on foil MECHANIC
igc99t120t6rh.pdf
IGC99T120T6RH IGBT4 High Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low V medium / high power modules CE(sat) soft turn off positive temperature coefficient Applications: easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC99T120T6RH 1200V 100A 10.39 x 9.5 mm2 sawn o
igc99t120t6rm.pdf
IGC99T120T6RM IGBT4 Medium Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses medium power modules soft turn off positive temperature coefficient Applications: easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC99T120T6RM 1200V 100A 10.39 x 9.5 mm2 sawn on foil
igc99t120t8rl.pdf
IGC99T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC99T120T8RL 1200V 10
igc99t120t8rh.pdf
IGC99T120T8RHIGBT4 High Power ChipFeatures: Recommended for: 1200V Trench + Field stop technology medium / high power modulesC low VCE(sat) soft turn offApplications: positive temperature coefficient medium / high power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC99T
igc99t120t8rq.pdf
IGC99T120T8RQHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: This chip is used for: 1200V Trench & Field stop technology power modulesC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn1) Die Size PackageIGC99T120T8RQ 1200
igc99t120t8rm.pdf
IGC99T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC99T120T
Datasheet: IGC99T120T8RM , MIXA40W1200TML , IGC99T120T8RL , MIXA40WB1200TED , IGC99T120T8RH , MIXA60W1200TED , IGC99T120T6RM , MIXA60WB1200TEH , TGAN20N135FD , MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH .
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