Справочник IGBT. IGC99T120T6RL

 

IGC99T120T6RL - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IGC99T120T6RL
   Тип транзистора: IGBT
   Тип управляющего канала: N
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 405 pF
   Тип корпуса: CHIP

 Аналог (замена) для IGC99T120T6RL

 

 

IGC99T120T6RL Datasheet (PDF)

 ..1. Size:71K  infineon
 igc99t120t6rl.pdf

IGC99T120T6RL IGC99T120T6RL

IGC99T120T6RL IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC99T120T6RL 1200V 100A 10.39 x 9.5 mm2 sawn on foil MECHANIC

 2.1. Size:71K  infineon
 igc99t120t6rh.pdf

IGC99T120T6RL IGC99T120T6RL

IGC99T120T6RH IGBT4 High Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low V medium / high power modules CE(sat) soft turn off positive temperature coefficient Applications: easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC99T120T6RH 1200V 100A 10.39 x 9.5 mm2 sawn o

 2.2. Size:71K  infineon
 igc99t120t6rm.pdf

IGC99T120T6RL IGC99T120T6RL

IGC99T120T6RM IGBT4 Medium Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses medium power modules soft turn off positive temperature coefficient Applications: easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC99T120T6RM 1200V 100A 10.39 x 9.5 mm2 sawn on foil

 4.1. Size:67K  infineon
 igc99t120t8rl.pdf

IGC99T120T6RL IGC99T120T6RL

IGC99T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC99T120T8RL 1200V 10

 4.2. Size:70K  infineon
 igc99t120t8rh.pdf

IGC99T120T6RL IGC99T120T6RL

IGC99T120T8RHIGBT4 High Power ChipFeatures: Recommended for: 1200V Trench + Field stop technology medium / high power modulesC low VCE(sat) soft turn offApplications: positive temperature coefficient medium / high power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC99T

 4.3. Size:82K  infineon
 igc99t120t8rq.pdf

IGC99T120T6RL IGC99T120T6RL

IGC99T120T8RQHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: This chip is used for: 1200V Trench & Field stop technology power modulesC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn1) Die Size PackageIGC99T120T8RQ 1200

 4.4. Size:72K  infineon
 igc99t120t8rm.pdf

IGC99T120T6RL IGC99T120T6RL

IGC99T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC99T120T

Другие IGBT... IGC99T120T8RM , MIXA40W1200TML , IGC99T120T8RL , MIXA40WB1200TED , IGC99T120T8RH , MIXA60W1200TED , IGC99T120T6RM , MIXA60WB1200TEH , TGAN20N135FD , MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH .

 

 
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