GA250TD120U IGBT. Datasheet pdf. Equivalent
Type Designator: GA250TD120U
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 250 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 227 nS
Coesⓘ - Output Capacitance, typ: 1979 pF
Qgⓘ - Total Gate Charge, typ: 1979 nC
Package: MODULE
GA250TD120U Transistor Equivalent Substitute - IGBT Cross-Reference Search
GA250TD120U Datasheet (PDF)
ga250td120u.pdf
PD - 50054AGA250TD120U"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBTFeatures Generation 4 IGBT technologyVCES = 1200VVCES = 1200V Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHzVCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft recovery @VGE = 15V,
ga250ts60u.pdf
PD - 50047CGA250TS60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.9V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 250A HEXFRED antiparallel diodes with ultra- soft
vs-ga250sa60s.pdf
VS-GA250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Ultralow VCE(on), 250 AFEATURES Standard: optimized for minimum saturation voltage and low speed Lowest conduction losses available Fully isolated package (2500 VAC) Very low internal inductance (5 nH typical) Industry standard outlineSOT-227 Designed and qualified for i
Datasheet: GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , FGPF4533 , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U , GA600GD25S , GA75TS120U .
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