GA250TD120U Datasheet and Replacement

PD - 50054AGA250TD120U"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBTFeatures Generation 4 IGBT technologyVCES = 1200VVCES = 1200V Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHzVCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft recovery @VGE = 15V,

PD - 50047CGA250TS60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.9V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 250A HEXFRED antiparallel diodes with ultra- soft

VS-GA250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Ultralow VCE(on), 250 AFEATURES Standard: optimized for minimum saturation voltage and low speed Lowest conduction losses available Fully isolated package (2500 VAC) Very low internal inductance (5 nH typical) Industry standard outlineSOT-227 Designed and qualified for i