All IGBT. IGC76T65T8RM Datasheet

 

IGC76T65T8RM Datasheet and Replacement


   Type Designator: IGC76T65T8RM
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.23 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Package: CHIP
      - IGBT Cross-Reference

 

IGC76T65T8RM Datasheet (PDF)

 ..1. Size:78K  infineon
igc76t65t8rm.pdf pdf_icon

IGC76T65T8RM

IGC76T65T8RMIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC76T65T

 6.1. Size:124K  infineon
sigc76t65r3e.pdf pdf_icon

IGC76T65T8RM

SIGC76T65R3E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC76T65R3E

 7.1. Size:123K  infineon
sigc76t60r3e.pdf pdf_icon

IGC76T65T8RM

SIGC76T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC76T60R3E 600V 150A 7.87 x 9.69 mm2 sawn on foil Mechanical Parame

 7.2. Size:123K  infineon
sigc76t60r3.pdf pdf_icon

IGC76T65T8RM

SIGC76T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC76T60R3E 600V 150A 7.87 x 9.69 mm2 sawn on foil Mechanical Parame

Datasheet: MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , CRG75T60AK3HD , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 .

History: DIM2400ESS12-A | IGC114T170S8RH

Keywords - IGC76T65T8RM transistor datasheet

 IGC76T65T8RM cross reference
 IGC76T65T8RM equivalent finder
 IGC76T65T8RM lookup
 IGC76T65T8RM substitution
 IGC76T65T8RM replacement

 

 
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