Справочник IGBT. IGC76T65T8RM

 

IGC76T65T8RM Даташит. Аналоги. Параметры и характеристики.


   Наименование: IGC76T65T8RM
   Тип транзистора: IGBT
   Тип управляющего канала: N
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.23 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Тип корпуса: CHIP
     - подбор IGBT транзистора по параметрам

 

IGC76T65T8RM Datasheet (PDF)

 ..1. Size:78K  infineon
igc76t65t8rm.pdfpdf_icon

IGC76T65T8RM

IGC76T65T8RMIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC76T65T

 6.1. Size:124K  infineon
sigc76t65r3e.pdfpdf_icon

IGC76T65T8RM

SIGC76T65R3E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC76T65R3E

 7.1. Size:123K  infineon
sigc76t60r3e.pdfpdf_icon

IGC76T65T8RM

SIGC76T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC76T60R3E 600V 150A 7.87 x 9.69 mm2 sawn on foil Mechanical Parame

 7.2. Size:123K  infineon
sigc76t60r3.pdfpdf_icon

IGC76T65T8RM

SIGC76T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC76T60R3E 600V 150A 7.87 x 9.69 mm2 sawn on foil Mechanical Parame

Другие IGBT... MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , CRG75T60AK3HD , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 .

History: IGC109T120T6RM | IGC36T120T8L | IGC10T65QE | DF80R12W2H3_B11 | T1600GB45G | DIM1200ASM45-TS001 | IGC10R60D

 

 
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