IGC76T65T8RM Даташит. Аналоги. Параметры и характеристики.
Наименование: IGC76T65T8RM
Тип транзистора: IGBT
Тип управляющего канала: N
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.23 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
Тип корпуса: CHIP
- подбор IGBT транзистора по параметрам
IGC76T65T8RM Datasheet (PDF)
igc76t65t8rm.pdf

IGC76T65T8RMIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC76T65T
sigc76t65r3e.pdf

SIGC76T65R3E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC76T65R3E
sigc76t60r3e.pdf

SIGC76T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC76T60R3E 600V 150A 7.87 x 9.69 mm2 sawn on foil Mechanical Parame
sigc76t60r3.pdf

SIGC76T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC76T60R3E 600V 150A 7.87 x 9.69 mm2 sawn on foil Mechanical Parame
Другие IGBT... MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , CRG75T60AK3HD , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 .
History: IGC109T120T6RM | IGC36T120T8L | IGC10T65QE | DF80R12W2H3_B11 | T1600GB45G | DIM1200ASM45-TS001 | IGC10R60D
History: IGC109T120T6RM | IGC36T120T8L | IGC10T65QE | DF80R12W2H3_B11 | T1600GB45G | DIM1200ASM45-TS001 | IGC10R60D



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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