Справочник IGBT. IGC76T65T8RM

 

IGC76T65T8RM - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IGC76T65T8RM

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 650

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.23

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 150

Максимальная температура перехода (Tj): 175

Корпус: CHIP

Аналог (замена) для IGC76T65T8RM

 

 

IGC76T65T8RM Datasheet (PDF)

1.1. igc76t65t8rm.pdf Size:78K _igbt_a

IGC76T65T8RM
IGC76T65T8RM

IGC76T65T8RM IGBT3 Chip Medium Power Features: Recommended for:  650V Trench & Field Stop technology  power modules C  high short circuit capability, self limiting short circuit current  positive temperature coefficient Applications:  easy paralleling  drives G  Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC76T65T

2.1. sigc76t65r3e.pdf Size:124K _igbt

IGC76T65T8RM
IGC76T65T8RM

 SIGC76T65R3E IGBT3 Chip Features: Recommended for: • 650V Trench & Field Stop technology • power modules • low VCE(sat) C • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient • easy paralleling G E • Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC76T65R3E

 3.1. sigc76t60r3e.pdf Size:123K _igbt

IGC76T65T8RM
IGC76T65T8RM

 SIGC76T60R3E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology • power module C • low VCE(sat) • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • easy paralleling E Chip Type VCE IC Die Size Package SIGC76T60R3E 600V 150A 7.87 x 9.69 mm2 sawn on foil Mechanical Parame

3.2. sigc76t60r3.pdf Size:123K _igbt

IGC76T65T8RM
IGC76T65T8RM

 SIGC76T60R3E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology • power module C • low VCE(sat) • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • easy paralleling E Chip Type VCE IC Die Size Package SIGC76T60R3E 600V 150A 7.87 x 9.69 mm2 sawn on foil Mechanical Parame

Другие IGBT... MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , SGW30N60HS , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 .

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Список транзисторов

Обновления

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |
 


 

 

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