MKI50-12E7 Datasheet and Replacement
Type Designator: MKI50-12E7
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Package: MODULE
MKI50-12E7 substitution
MKI50-12E7 Datasheet (PDF)
mki50-12f7.pdf
Advanced Technical Information MKI 50-12F7IC25 = 65 AIGBT ModulesVCES = 1200 VH BridgeVCE(sat) typ. = 3.2 VShort Circuit SOA CapabilitySquare RBSOA131 92 1016141134 1217MKIFeatures IGBTs Fast NPT IGBTsSymbol Conditions Maximum Ratings - low saturation voltage- positive temperature coefficient forVCES TVJ = 25C to 150C 1200 Veasy paralleling
mki50-06a7t.pdf
MKI 50-06 A7MKI 50-06 A7TIC25 = 72 AIGBT ModulesVCES = 600 VH-BridgeVCE(sat) typ. = 1.9 VShort Circuit SOA CapabilitySquare RBSOA13T5Type NTC - Option T1D1 D591MKI 50-06 A7 without NTCT102MKI 50-06 A7T with NTC1614T2 T6D2 D611T312417Features IGBTs NPT IGBT technologySymbol Conditions Maximum Ratings low saturation voltage
mki50-06a7.pdf
MKI 50-06 A7MKI 50-06 A7TIC25 = 72 AIGBT ModulesVCES = 600 VH-BridgeVCE(sat) typ. = 1.9 VShort Circuit SOA CapabilitySquare RBSOA13T5Type NTC - Option T1D1 D591MKI 50-06 A7 without NTCT102MKI 50-06 A7T with NTC1614T2 T6D2 D611T312417Features IGBTs NPT IGBT technologySymbol Conditions Maximum Ratings low saturation voltage
Datasheet: MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T , IKW40T120 , MKI50-12F7 , MKI75-06A7 , MKI75-06A7T , MKI75-12E8 , MKI80-06T6K , MMIX1G320N60B3 , MMIX1G75N250 , MMIX4G20N250 .
History: BSM150GB60DLC | SPT25N120T1 | FGAF30S65AQ | IXGK320N60A3 | MMG400D120UA6TC | IRG4BC30U
Keywords - MKI50-12E7 transistor datasheet
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History: BSM150GB60DLC | SPT25N120T1 | FGAF30S65AQ | IXGK320N60A3 | MMG400D120UA6TC | IRG4BC30U
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