All IGBT. GT10Q301 Datasheet

 

GT10Q301 Datasheet and Replacement


   Type Designator: GT10Q301
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 140 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 70 nS
   Package: TO3P
 

 GT10Q301 substitution

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GT10Q301 Datasheet (PDF)

 ..1. Size:173K  toshiba
 gt10q301.pdf pdf_icon

GT10Q301

GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Unit: mmMotor Control Applications Third-generation IGBT Enhancement mode type High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25

 8.1. Size:70K  toshiba
 gt10q311.pdf pdf_icon

GT10Q301

Datasheet: GA500TD60U , GA50TS120U , GA600GD25S , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , BT15T120ANF , GT10Q311 , GT15G101 , GT15J101 , GT15J102 , GT15J103 , GT15N101 , GT15Q101 , GT15Q301 .

Keywords - GT10Q301 transistor datasheet

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