GT20D101 Datasheet and Replacement
Type Designator: GT20D101
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 180 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 250 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Coesⓘ - Output Capacitance, typ: 400 pF
Package: TO247
GT20D101 substitution
GT20D101 Datasheet (PDF)
Datasheet: GT15G101 , GT15J101 , GT15J102 , GT15J103 , GT15N101 , GT15Q101 , GT15Q301 , GT15Q311 , RJP30H2A , GT20D101O , GT20D101Y , GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 .
History: IRG4IBC30S
Keywords - GT20D101 transistor datasheet
GT20D101 cross reference
GT20D101 equivalent finder
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History: IRG4IBC30S
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