SKW07N120 Datasheet. Specs and Replacement
Type Designator: SKW07N120 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 16.5 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
tr ⓘ - Rise Time, typ: 29 nS
Coesⓘ - Output Capacitance, typ: 90 pF
Package: TO247
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SKW07N120 datasheet
skw07n120.pdf
SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 - parall... See More ⇒
skw07n120 .pdf
SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 - parall... See More ⇒
Specs: IKA15N60T, IKB15N60T, IKB20N60T, IKW20N60T, IKW30N60T, SL50T120FZ, IKW75N60T, SKB02N120, GT30J127, SKW15N120, SKW25N120, SKB02N60, SKB04N60, SKA06N60, SKB06N60, SKW10N60A, SKB15N60
Keywords - SKW07N120 transistor spec
SKW07N120 cross reference
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History: SKB02N120
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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