SKW07N120 IGBT. Datasheet pdf. Equivalent
Type Designator: SKW07N120
Type: IGBT + Anti-Parallel Diode
Marking Code: K07N120
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 16.5 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 29 nS
Coesⓘ - Output Capacitance, typ: 90 pF
Qgⓘ - Total Gate Charge, typ: 70 nC
Package: TO247
SKW07N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SKW07N120 Datasheet (PDF)
skw07n120.pdf
SKW07N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 - parall
skw07n120 .pdf
SKW07N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 - parall
Datasheet: IKA15N60T , IKB15N60T , IKB20N60T , IKW20N60T , IKW30N60T , SL50T120FZ , IKW75N60T , SKB02N120 , FGPF4536 , SKW15N120 , SKW25N120 , SKB02N60 , SKB04N60 , SKA06N60 , SKB06N60 , SKW10N60A , SKB15N60 .
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