GT20D101Y Datasheet. Specs and Replacement

Type Designator: GT20D101Y  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 180 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 250 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

Coesⓘ - Output Capacitance, typ: 400 pF

Package: TO247

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Specs: GT15J102, GT15J103, GT15N101, GT15Q101, GT15Q301, GT15Q311, GT20D101, GT20D101O, GT50JR22, GT20G101, GT20G102, GT20J301, GT20J311, GT25G101, GT25G102, GT25H101, GT25J101

Keywords - GT20D101Y transistor spec

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