SKB04N60 Datasheet and Replacement
Type Designator: SKB04N60
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 9.4 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 29 pF
Package: TO263
- IGBT Cross-Reference
SKB04N60 Datasheet (PDF)
skb04n60.pdf
SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight
skb04n60g.pdf
SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight
Datasheet: IKW30N60T , SL50T120FZ , IKW75N60T , SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 , SKB02N60 , SGT40N60NPFDPN , SKA06N60 , SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS .
History: HGTG30N120CN | IXGR32N90B2D1 | IXGR24N120C3D1 | SSG55N60N
Keywords - SKB04N60 transistor datasheet
SKB04N60 cross reference
SKB04N60 equivalent finder
SKB04N60 lookup
SKB04N60 substitution
SKB04N60 replacement
History: HGTG30N120CN | IXGR32N90B2D1 | IXGR24N120C3D1 | SSG55N60N
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