SKA06N60 Spec and Replacement
Type Designator: SKA06N60
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 32 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 9 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 38 pF
Package: TO220F
SKA06N60 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SKA06N60 specs
skp06n60 ska06n60.pdf
SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for Motor controls, Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedn... See More ⇒
ska06n60.pdf
SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for Motor controls, Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedn... See More ⇒
Specs: SL50T120FZ , IKW75N60T , SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 , SKB02N60 , SKB04N60 , RJP30H2A , SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS .
Keywords - SKA06N60 transistor spec
SKA06N60 cross reference
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