SKA06N60 Datasheet and Replacement
Type Designator: SKA06N60
Type: IGBT + Anti-Parallel Diode
Marking Code: K06N60
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 32 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 9 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 38 pF
Qg ⓘ - Total Gate Charge, typ: 32 nC
Package: TO220F
SKA06N60 substitution
SKA06N60 Datasheet (PDF)
skp06n60 ska06n60.pdf
SKP06N60 SKA06N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: Motor controls, Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedn
ska06n60.pdf
SKP06N60 SKA06N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: Motor controls, Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedn
Datasheet: SL50T120FZ , IKW75N60T , SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 , SKB02N60 , SKB04N60 , FGH60N60SMD , SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS .
Keywords - SKA06N60 transistor datasheet
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