GT20G102 Datasheet. Specs and Replacement

Type Designator: GT20G102  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 60 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Package: IPAK

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GT20G102 datasheet

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GT20G102

GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage V = 8.0V (Max.) CE(sat) (I = 130A) C Enhancement-Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V Gate-Emitter Voltage VGES 20... See More ⇒

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GT20G102

GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G101 Unit mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage V = 8V (Max.) (I = 130A) CE (sat) C Enhancement-Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V Gate-Emitter Voltage VGES 25 V ... See More ⇒

Specs: GT15N101, GT15Q101, GT15Q301, GT15Q311, GT20D101, GT20D101O, GT20D101Y, GT20G101, G50T65D, GT20J301, GT20J311, GT25G101, GT25G102, GT25H101, GT25J101, GT25Q101, GT25Q301

Keywords - GT20G102 transistor spec

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