All IGBT. GT20G102 Datasheet

 

GT20G102 Datasheet and Replacement


   Type Designator: GT20G102
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 60 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 100 nS
   Package: IPAK
 

 GT20G102 substitution

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GT20G102 Datasheet (PDF)

 ..1. Size:194K  toshiba
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GT20G102

GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mmSTROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : V = 8.0V (Max.) CE(sat)(I = 130A) C Enhancement-Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 VGate-Emitter Voltage VGES 20

 7.1. Size:179K  toshiba
 gt20g101.pdf pdf_icon

GT20G102

GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G101 Unit: mmSTROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : V = 8V (Max.) (I = 130A) CE (sat) C Enhancement-Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 VGate-Emitter Voltage VGES 25 V

Datasheet: GT15N101 , GT15Q101 , GT15Q301 , GT15Q311 , GT20D101 , GT20D101O , GT20D101Y , GT20G101 , SGT50T65FD1PT , GT20J301 , GT20J311 , GT25G101 , GT25G102 , GT25H101 , GT25J101 , GT25Q101 , GT25Q301 .

Keywords - GT20G102 transistor datasheet

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