IHW30N90T Specs and Replacement
Type Designator: IHW30N90T
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 428 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 26 nS
Coesⓘ - Output Capacitance, typ: 96 pF
Package: TO247
- IGBT ⓘ Cross-Reference Search
IHW30N90T datasheet
..1. Size:288K infineon
ihw30n90t d10.pdf 
IHW30N90T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel diode TrenchStop and Fieldstop technology for 900 V applications offers G - very tight parameter distribution E - high ruggedness, temperature stable behavior - easy parallel switching... See More ⇒
..2. Size:288K infineon
ihw30n90t.pdf
IHW30N90T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel diode TrenchStop and Fieldstop technology for 900 V applications offers G - very tight parameter distribution E - high ruggedness, temperature stable behavior - easy parallel switching... See More ⇒
6.1. Size:298K infineon
ihw30n90r .pdf
IHW30N90R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers - very tight parameter distribution G - high ruggedness, temperature stable behavior E - easy parallel switching capability due to positive temperature coefficient... See More ⇒
6.2. Size:298K infineon
ihw30n90r.pdf
IHW30N90R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers - very tight parameter distribution G - high ruggedness, temperature stable behavior E - easy parallel switching capability due to positive temperature coefficient... See More ⇒
8.2. Size:1646K infineon
ihw30n110r3 1 2.pdf
IGBT Reverse conducting IGBT with monolithic body diode IHW30N110R3 1100V TRENCHSTOPTM IH-Series for Soft Switching Applications Data sheet Industrial & Multimarket IHW30N110R3 TRENCHSTOPTM IH-Series for Soft Switching Applications Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation... See More ⇒
8.3. Size:324K infineon
ihw30n100r.pdf
IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175 C G E Trench and Fieldstop technology for 1000 V applications offers - very tight parameter distribution - high ruggedness, temperature st... See More ⇒
8.4. Size:360K infineon
ihw30n60t-d10rev2 2.pdf
IHW30N60T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop technology with optimised diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E TrenchStop and Fieldstop technology for 600 V applications offers - very tight parameter distribution - high ruggedness, te... See More ⇒
8.5. Size:2100K infineon
ihw30n65r5.pdf
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N65R5 Data sheet Industrial Power Control IHW30N65R5 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic reverse-conducting diode with low forward voltage TRENCHSTOPTM technology offers - very tight parameter distribution G - high ru... See More ⇒
8.6. Size:313K infineon
ihw30n100t rev2 7.pdf
IHW30N100T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175 C TrenchStop and Fieldstop technology for 1000 V applications G E offers - very tight parameter distribution - high ruggedness, tem... See More ⇒
8.7. Size:391K infineon
ihw30n160r2 rev2 1g.pdf
IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior... See More ⇒
8.8. Size:1950K infineon
ihw30n120r3.pdf
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N120R3 Data sheet Industrial Power Control IHW30N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology offering - very tight parameter d... See More ⇒
8.9. Size:324K infineon
ihw30n100r .pdf
IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175 C G E Trench and Fieldstop technology for 1000 V applications offers - very tight parameter distribution - high ruggedness, temperature st... See More ⇒
8.10. Size:1768K infineon
ihw30n135r5.pdf
IHW30N135R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive ... See More ⇒
8.11. Size:1440K infineon
ihw30n120r5.pdf
IHW30N120R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive ... See More ⇒
8.12. Size:1758K infineon
ihw30n160r5.pdf
IHW30N160R5 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage TRENCHSTOPTM technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior G - low V CEsat E - easy parallel switching capability due to positive temperature coeffic... See More ⇒
8.13. Size:1984K infineon
ihw30n135r3.pdf
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N135R3 Data sheet Industrial Power Control IHW30N135R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Offers new higher breakdown voltage to 1350V for improved reliability Powerful monolithic body diode with low forward voltage designed for soft commu... See More ⇒
8.15. Size:360K infineon
ihw30n120r2 rev1 5g.pdf
IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications G E offers - very tight parameter distribution - high ruggedness, temperature stable behavior NP... See More ⇒
8.16. Size:2046K infineon
ihw30n110r3.pdf
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N110R3 Data sheet Industrial Power Control IHW30N110R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only Very tight parameter distribution High ruggedness, tem... See More ⇒
8.17. Size:540K infineon
ihw30n60t.pdf
IHW30N60T Soft Switching Series q Low Loss DuoPack IGBT in TRENCHSTOP technology with optimised diode Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s TRENCHSTOP and Fieldstop technology for 600V applications offers G - very tight parameter distribution E - high ruggedness, temperature stable b... See More ⇒
8.18. Size:313K infineon
ihw30n100t.pdf
IHW30N100T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175 C TrenchStop and Fieldstop technology for 1000 V applications G E offers - very tight parameter distribution - high ruggedness, tem... See More ⇒
8.19. Size:391K infineon
ihw30n160r2.pdf
IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior... See More ⇒
Specs: IKB03N120H2
, IKW03N120H2
, IHW30N100R
, IHW30N90R
, IHW30N60T
, IHW30N160R2
, IHW40T120
, IHW30N100T
, MBQ50T65FDSC
, IHW40N60T
, IHW40T60
, IHW40N60R
, IHW25N120R2
, IHD10N60RA
, IHW30N120R2
, IHD06N60RA
, IHW15T120
.
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