IHW30N90T - аналоги и описание IGBT

IHW30N90T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel diode TrenchStop and Fieldstop technology for 900 V applications offers G - very tight parameter distribution E - high ruggedness, temperature stable behavior - easy parallel switching

IHW30N90T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel diode TrenchStop and Fieldstop technology for 900 V applications offers G - very tight parameter distribution E - high ruggedness, temperature stable behavior - easy parallel switching

IHW30N90R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers - very tight parameter distribution G - high ruggedness, temperature stable behavior E - easy parallel switching capability due to positive temperature coefficient

IHW30N90R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers - very tight parameter distribution G - high ruggedness, temperature stable behavior E - easy parallel switching capability due to positive temperature coefficient

IGBT Reverse conducting IGBT with monolithic body diode IHW30N110R3 1100V TRENCHSTOPTM IH-Series for Soft Switching Applications Data sheet Industrial & Multimarket IHW30N110R3 TRENCHSTOPTM IH-Series for Soft Switching Applications Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175 C G E Trench and Fieldstop technology for 1000 V applications offers - very tight parameter distribution - high ruggedness, temperature st

IHW30N60T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop technology with optimised diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E TrenchStop and Fieldstop technology for 600 V applications offers - very tight parameter distribution - high ruggedness, te

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N65R5 Data sheet Industrial Power Control IHW30N65R5 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic reverse-conducting diode with low forward voltage TRENCHSTOPTM technology offers - very tight parameter distribution G - high ru

IHW30N100T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175 C TrenchStop and Fieldstop technology for 1000 V applications G E offers - very tight parameter distribution - high ruggedness, tem

IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N120R3 Data sheet Industrial Power Control IHW30N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology offering - very tight parameter d

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175 C G E Trench and Fieldstop technology for 1000 V applications offers - very tight parameter distribution - high ruggedness, temperature st

IHW30N135R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive

IHW30N120R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive

IHW30N160R5 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage TRENCHSTOPTM technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior G - low V CEsat E - easy parallel switching capability due to positive temperature coeffic

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N135R3 Data sheet Industrial Power Control IHW30N135R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Offers new higher breakdown voltage to 1350V for improved reliability Powerful monolithic body diode with low forward voltage designed for soft commu

IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications G E offers - very tight parameter distribution - high ruggedness, temperature stable behavior NP

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N110R3 Data sheet Industrial Power Control IHW30N110R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only Very tight parameter distribution High ruggedness, tem

IHW30N60T Soft Switching Series q Low Loss DuoPack IGBT in TRENCHSTOP technology with optimised diode Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s TRENCHSTOP and Fieldstop technology for 600V applications offers G - very tight parameter distribution E - high ruggedness, temperature stable b

IHW30N100T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175 C TrenchStop and Fieldstop technology for 1000 V applications G E offers - very tight parameter distribution - high ruggedness, tem

IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior