IHW30N90T datasheet, аналоги, основные параметры
Наименование: IHW30N90T 📄📄
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 428 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 900 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
tr ⓘ - Время нарастания типовое: 26 nS
Coesⓘ - Выходная емкость, типовая: 96 pF
Тип корпуса: TO247
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Аналог (замена) для IHW30N90T
- подбор ⓘ IGBT транзистора по параметрам
IHW30N90T даташит
..1. Size:288K infineon
ihw30n90t d10.pdf 
IHW30N90T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel diode TrenchStop and Fieldstop technology for 900 V applications offers G - very tight parameter distribution E - high ruggedness, temperature stable behavior - easy parallel switching
..2. Size:288K infineon
ihw30n90t.pdf 
IHW30N90T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel diode TrenchStop and Fieldstop technology for 900 V applications offers G - very tight parameter distribution E - high ruggedness, temperature stable behavior - easy parallel switching
6.1. Size:298K infineon
ihw30n90r .pdf 
IHW30N90R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers - very tight parameter distribution G - high ruggedness, temperature stable behavior E - easy parallel switching capability due to positive temperature coefficient
6.2. Size:298K infineon
ihw30n90r.pdf 
IHW30N90R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers - very tight parameter distribution G - high ruggedness, temperature stable behavior E - easy parallel switching capability due to positive temperature coefficient
8.2. Size:1646K infineon
ihw30n110r3 1 2.pdf 
IGBT Reverse conducting IGBT with monolithic body diode IHW30N110R3 1100V TRENCHSTOPTM IH-Series for Soft Switching Applications Data sheet Industrial & Multimarket IHW30N110R3 TRENCHSTOPTM IH-Series for Soft Switching Applications Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation
8.3. Size:324K infineon
ihw30n100r.pdf 
IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175 C G E Trench and Fieldstop technology for 1000 V applications offers - very tight parameter distribution - high ruggedness, temperature st
8.4. Size:360K infineon
ihw30n60t-d10rev2 2.pdf 
IHW30N60T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop technology with optimised diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E TrenchStop and Fieldstop technology for 600 V applications offers - very tight parameter distribution - high ruggedness, te
8.5. Size:2100K infineon
ihw30n65r5.pdf 
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N65R5 Data sheet Industrial Power Control IHW30N65R5 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic reverse-conducting diode with low forward voltage TRENCHSTOPTM technology offers - very tight parameter distribution G - high ru
8.6. Size:313K infineon
ihw30n100t rev2 7.pdf 
IHW30N100T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175 C TrenchStop and Fieldstop technology for 1000 V applications G E offers - very tight parameter distribution - high ruggedness, tem
8.7. Size:391K infineon
ihw30n160r2 rev2 1g.pdf 
IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior
8.8. Size:1950K infineon
ihw30n120r3.pdf 
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N120R3 Data sheet Industrial Power Control IHW30N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology offering - very tight parameter d
8.9. Size:324K infineon
ihw30n100r .pdf 
IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175 C G E Trench and Fieldstop technology for 1000 V applications offers - very tight parameter distribution - high ruggedness, temperature st
8.10. Size:1768K infineon
ihw30n135r5.pdf 
IHW30N135R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive
8.11. Size:1440K infineon
ihw30n120r5.pdf 
IHW30N120R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive
8.12. Size:1758K infineon
ihw30n160r5.pdf 
IHW30N160R5 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage TRENCHSTOPTM technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior G - low V CEsat E - easy parallel switching capability due to positive temperature coeffic
8.13. Size:1984K infineon
ihw30n135r3.pdf 
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N135R3 Data sheet Industrial Power Control IHW30N135R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Offers new higher breakdown voltage to 1350V for improved reliability Powerful monolithic body diode with low forward voltage designed for soft commu
8.15. Size:360K infineon
ihw30n120r2 rev1 5g.pdf 
IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications G E offers - very tight parameter distribution - high ruggedness, temperature stable behavior NP
8.16. Size:2046K infineon
ihw30n110r3.pdf 
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N110R3 Data sheet Industrial Power Control IHW30N110R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only Very tight parameter distribution High ruggedness, tem
8.17. Size:540K infineon
ihw30n60t.pdf 
IHW30N60T Soft Switching Series q Low Loss DuoPack IGBT in TRENCHSTOP technology with optimised diode Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s TRENCHSTOP and Fieldstop technology for 600V applications offers G - very tight parameter distribution E - high ruggedness, temperature stable b
8.18. Size:313K infineon
ihw30n100t.pdf 
IHW30N100T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175 C TrenchStop and Fieldstop technology for 1000 V applications G E offers - very tight parameter distribution - high ruggedness, tem
8.19. Size:391K infineon
ihw30n160r2.pdf 
IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior
Другие IGBT... IKB03N120H2, IKW03N120H2, IHW30N100R, IHW30N90R, IHW30N60T, IHW30N160R2, IHW40T120, IHW30N100T, MBQ50T65FDSC, IHW40N60T, IHW40T60, IHW40N60R, IHW25N120R2, IHD10N60RA, IHW30N120R2, IHD06N60RA, IHW15T120
