All IGBT. IKP10N60T Datasheet

 

IKP10N60T Datasheet and Replacement


   Type Designator: IKP10N60T
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K10T60
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 110 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 24 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 8 nS
   Coesⓘ - Output Capacitance, typ: 40 pF
   Qgⓘ - Total Gate Charge, typ: 62 nC
   Package: TO220
      - IGBT Cross-Reference

 

IKP10N60T Datasheet (PDF)

 ..1. Size:453K  infineon
 ikp10n60t.pdf pdf_icon

IKP10N60T

IKP10N60T TRENCHSTOP Series p Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for : GE - Variable Speed Drive for washing machines, air condition

 0.1. Size:346K  infineon
 ikp10n60trev2 3g.pdf pdf_icon

IKP10N60T

IKP10N60T TrenchStop Series p Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cook

Datasheet: IKW25N120T2 , IKW40N120T2 , SKB10N60A , IKI04N60T , IHW20N120R3 , IHW15N120R3 , IKP04N60T , IKP06N60T , IKW30N60H3 , IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 .

History: IRGB4059D | IRGS10B60KD | SNG201025

Keywords - IKP10N60T transistor datasheet

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