SKP04N60 Specs and Replacement
Type Designator: SKP04N60
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 9.4 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 29 pF
Package: TO220
SKP04N60 Substitution - IGBT ⓘ Cross-Reference Search
SKP04N60 datasheet
skp04n60.pdf
SKP04N60 SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower Eoff compared to previous generation C combined with low conduction losses Short circuit withstand time 10 s Designed for - Motor controls G E - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness,... See More ⇒
Specs: IHW20N120R3 , IHW15N120R3 , IKP04N60T , IKP06N60T , IKP10N60T , IKP15N60T , IKP20N60T , SKP02N60 , IRG4PC50U , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 .
Keywords - SKP04N60 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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