SKP04N60 Datasheet. Specs and Replacement
Type Designator: SKP04N60 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 9.4 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 29 pF
Package: TO220
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SKP04N60 datasheet
skp04n60.pdf
SKP04N60 SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower Eoff compared to previous generation C combined with low conduction losses Short circuit withstand time 10 s Designed for - Motor controls G E - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness,... See More ⇒
Specs: IHW20N120R3, IHW15N120R3, IKP04N60T, IKP06N60T, IKP10N60T, IKP15N60T, IKP20N60T, SKP02N60, FGH75T65UPD, SKP06N60, SKP10N60A, SKP15N60, IKP01N120H2, IKP03N120H2, SKP02N120, IHY15N120R3, IHY20N120R3
Keywords - SKP04N60 transistor spec
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History: IHW40N60T
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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