SKP04N60 Datasheet and Replacement
Type Designator: SKP04N60
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 9.4 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 29 pF
Qg ⓘ - Total Gate Charge, typ: 24 nC
Package: TO220
SKP04N60 substitution
SKP04N60 Datasheet (PDF)
skp04n60.pdf
SKP04N60SKB04N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower Eoff compared to previous generationCcombined with low conduction losses Short circuit withstand time 10 s Designed for:- Motor controlsGE- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- high ruggedness,
Datasheet: IHW20N120R3 , IHW15N120R3 , IKP04N60T , IKP06N60T , IKP10N60T , IKP15N60T , IKP20N60T , SKP02N60 , SGP30N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 .
History: CPV362M4FPBF | FGD3N60LSD
Keywords - SKP04N60 transistor datasheet
SKP04N60 cross reference
SKP04N60 equivalent finder
SKP04N60 lookup
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History: CPV362M4FPBF | FGD3N60LSD
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