IHY15N120R3 Datasheet and Replacement
Type Designator: IHY15N120R3
Type: IGBT + Anti-Parallel Diode
Marking Code: H15R1203
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 254 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.48 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Coesⓘ - Output Capacitance, typ: 40 pF
Qg ⓘ - Total Gate Charge, typ: 165 nC
Package: TO247
IHY15N120R3 substitution
IHY15N120R3 Datasheet (PDF)
ihy15n120r3.pdf
IHY15N120R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology offering: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive te
Datasheet: SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , RJH60F5DPQ-A0 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R .
History: GT45F128 | SGW50N60HS
Keywords - IHY15N120R3 transistor datasheet
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History: GT45F128 | SGW50N60HS
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