IHY15N120R3 Specs and Replacement
Type Designator: IHY15N120R3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 254 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.48 V @25℃
Coesⓘ - Output Capacitance, typ: 40 pF
Package: TO247
IHY15N120R3 Substitution - IGBT ⓘ Cross-Reference Search
IHY15N120R3 datasheet
ihy15n120r3.pdf
IHY15N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology offering - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive te... See More ⇒
Specs: SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , TGAN60N60F2DS , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R .
Keywords - IHY15N120R3 transistor spec
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