All IGBT. IHY15N120R3 Datasheet

 

IHY15N120R3 Datasheet and Replacement


   Type Designator: IHY15N120R3
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H15R1203
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 254 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.48 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 40 pF
   Qgⓘ - Total Gate Charge, typ: 165 nC
   Package: TO247
      - IGBT Cross-Reference

 

IHY15N120R3 Datasheet (PDF)

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IHY15N120R3

IHY15N120R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology offering: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive te

Datasheet: SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , GT30F125 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R .

History: IRG4PH50S-E | 1MBI1500UE-330-02

Keywords - IHY15N120R3 transistor datasheet

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