GT25G102 PDF and Equivalents Search

 

GT25G102 PDF Specs and Replacement


   Type Designator: GT25G102
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 25 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
   tr ⓘ - Rise Time, typ: 100 nS
   Package: IPAK
 

 GT25G102 Substitution

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GT25G102 PDF specs

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GT25G102

GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 Unit mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage V = 8V (Max.) (I = 150A) CE (sat) C Enhancement-Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V Gate-Emitter Voltage VGES 20 V ... See More ⇒

 7.1. Size:309K  toshiba
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GT25G102

GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage VCE (sat)=8V (Max.) (IC=170A) Enhancement-Mode 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V Gate-Emitter Voltage VGES 25 V... See More ⇒

Specs: GT20D101 , GT20D101O , GT20D101Y , GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , RJP30E2DPP-M0 , GT25H101 , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 .

Keywords - GT25G102 transistor spec

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