GT25G102 IGBT. Datasheet pdf. Equivalent
Type Designator: GT25G102
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 100 nS
Package: IPAK
GT25G102 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT25G102 Datasheet (PDF)
gt25g102.pdf
GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 Unit: mmSTROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : V = 8V (Max.) (I = 150A) CE (sat) C Enhancement-Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 VGate-Emitter Voltage VGES 20 V
gt25g101.pdf
GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G101 Unit in mmSTROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat)=8V (Max.) (IC=170A) Enhancement-Mode 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 VGate-Emitter Voltage VGES 25 V
Datasheet: GT20D101 , GT20D101O , GT20D101Y , GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , FGA25N120ANTD , GT25H101 , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 .
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