IKU15N60R Datasheet and Replacement
Type Designator: IKU15N60R
Type: IGBT + Anti-Parallel Diode
Marking Code: K15R60
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 10 nS
Coesⓘ - Output Capacitance, typ: 53 pF
Qg ⓘ - Total Gate Charge, typ: 90 nC
Package: TO251
IKU15N60R substitution
IKU15N60R Datasheet (PDF)
iku15n60r.pdf
IGBTIGBT with integrated diode in packages offering space saving advantageIKD15N60R, IKU15N60R600V TRENCHSTOPTM RC-Series for hard switching applicationsDatasheetIndustrial & MultimarketIKD15N60R, IKU15N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (R
Datasheet: IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKW40T120 , IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 .
Keywords - IKU15N60R transistor datasheet
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