IKU06N60R PDF and Equivalents Search

 

IKU06N60R Specs and Replacement

Type Designator: IKU06N60R

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 12 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 7 nS

Coesⓘ - Output Capacitance, typ: 24 pF

Package: TO251

 IKU06N60R Substitution

- IGBT ⓘ Cross-Reference Search

 

IKU06N60R datasheet

 ..1. Size:1800K  infineon
 iku06n60r.pdf pdf_icon

IKU06N60R

IGBT IGBT with integrated diode in packages offering space saving advantage IKD06N60R, IKU06N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD06N60R, IKU06N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (R... See More ⇒

Specs: IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R , IKD06N60R , MBQ40T65FDSC , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 .

Keywords - IKU06N60R transistor spec

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