IKW30N60H3 IGBT. Datasheet pdf. Equivalent
Type Designator: IKW30N60H3
Type: IGBT + Anti-Parallel Diode
Marking Code: K30H603
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 187 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 33 nS
Coesⓘ - Output Capacitance, typ: 107 pF
Qgⓘ - Total Gate Charge, typ: 165 nC
Package: TO247
IKW30N60H3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKW30N60H3 Datasheet (PDF)
ikw30n60h3 rev1 2g.pdf
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ikw30n60h3.pdf
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ikw30n60dtp.pdf
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aikw30n60ct.pdf
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ikw30n60trev2 3g.pdf
IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterruptible Power Supply TrenchStop and Fi
ikw30n60t.pdf
IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technol
Datasheet: IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R , IKW20N60H3 , TGPF30N40P , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF .
History: FGPF4533
History: FGPF4533
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