IKW30N60H3 datasheet, аналоги, основные параметры
Наименование: IKW30N60H3 📄📄
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 187 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.95 V @25℃
tr ⓘ - Время нарастания типовое: 33 nS
Coesⓘ - Выходная емкость, типовая: 107 pF
Тип корпуса: TO247
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Аналог (замена) для IKW30N60H3
- подбор ⓘ IGBT транзистора по параметрам
IKW30N60H3 даташит
ikw30n60h3 rev1 2g.pdf
IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKW30N60H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features TREN
ikw30n60h3.pdf
IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IKW30N60H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features TRE
ikw30n60dtp.pdf
IGBT TRENCHSTOPTM Performance technology copacked with RAPID 1 fast anti-parallel diode IKW30N60DTP 600V DuoPack IGBT and diode TRENCHSTOPTM Performance series Data sheet Industrial Power Control IKW30N60DTP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM technology offering very low V CEsat low turn-off losses
aikw30n60ct.pdf
AIKW30N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Shor
Другие IGBT... IKU10N60R, IKD15N60R, IKU15N60R, IKD04N60R, IKU04N60R, IKD06N60R, IKU06N60R, IKW20N60H3, MGD623S, IHW40N60RF, IHW30N110R3, IKW40N60H3, IKB20N60H3, IKW50N60H3, IKP20N60H3, IHY20N135R3, IKD03N60RF
History: NGD18N40CLB | SGH80N60UFD | OST60N65H4EMF
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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