GT25H101 PDF and Equivalents Search

 

GT25H101 PDF Specs and Replacement


   Type Designator: GT25H101
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 25 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
   tr ⓘ - Rise Time, typ: 400 nS
   Package: TO3P
 

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GT25H101 PDF specs

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GT25H101

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GT25H101

MMGT25H120XB6C 1200V 25A PIM Module September 2015 Version 0 RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba... See More ⇒

Specs: GT20D101O , GT20D101Y , GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , CRG60T60AN3H , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 .

History: CM600DU-24F

Keywords - GT25H101 transistor spec

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