GT25H101 Specs and Replacement
Type Designator: GT25H101
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
Package: TO3P
GT25H101 Substitution - IGBT ⓘ Cross-Reference Search
GT25H101 datasheet
mmgt25h120xb6c.pdf
MMGT25H120XB6C 1200V 25A PIM Module September 2015 Version 0 RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba... See More ⇒
Specs: GT20D101O , GT20D101Y , GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , CRG60T60AN3H , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 .
Keywords - GT25H101 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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