All IGBT. GT25H101 Datasheet

 

GT25H101 Datasheet and Replacement


   Type Designator: GT25H101
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 400 nS
   Package: TO3P
      - IGBT Cross-Reference

 

GT25H101 Datasheet (PDF)

 ..1. Size:119K  toshiba
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GT25H101

 8.1. Size:162K  macmic
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GT25H101

MMGT25H120XB6C1200V 25A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba

Datasheet: GT20D101O , GT20D101Y , GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , FGA25N120ANTD , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 .

History: CM900HC-90H | APTGF75SK60D1 | RJP60V0DPM | MG300N1US1 | GT10G101 | FGH40T100SMD | IXGH10N60

Keywords - GT25H101 transistor datasheet

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