All IGBT. SGB10N60A Datasheet

 

SGB10N60A IGBT. Datasheet pdf. Equivalent


   Type Designator: SGB10N60A
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 92 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 12 nS
   Coesⓘ - Output Capacitance, typ: 62 pF
   Package: TO263

 SGB10N60A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGB10N60A Datasheet (PDF)

 ..1. Size:789K  infineon
sgb10n60a .pdf

SGB10N60A
SGB10N60A

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

 ..2. Size:785K  infineon
sgb10n60a.pdf

SGB10N60A
SGB10N60A

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

 9.1. Size:605K  cn super semi
sgb100n042 sgp100n042.pdf

SGB10N60A
SGB10N60A

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSG*100N042Rev. 0.9Jul. 2021www.supersemi.com.cnSGB100N042/SGP100N042100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120Athat is uniquely optimized to provide the most efficient hig

 9.2. Size:708K  cn super semi
sgb100n025 sgp100n025 sgw100n025.pdf

SGB10N60A
SGB10N60A

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSG*100N025Rev. 1.1Jul. 2021www.supersemi.com.cnSGB100N025/SGP100N025/SGW100N025100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 180Athat is uniquely optimized to provide the most ef

Datasheet: SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 , RJP63K2DPP-M0 , SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 , SGB20N60 , SGW20N60 , SGB30N60 , SGW30N60 .

 

 
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