SGB10N60A - аналоги, параметры транзистора - Справочник транзисторов

SGB10N60A даташит

..1. Size:789K infineon
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SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

..2. Size:785K infineon
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9.1. Size:605K cn super semi
sgb100n042 sgp100n042.pdf pdf_icon

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N042 Rev. 0.9 Jul. 2021 www.supersemi.com.cn SGB100N042/SGP100N042 100V N-Channel MOSFET Description Features VDS 100V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120A that is uniquely optimized to provide the most efficient hig

9.2. Size:708K cn super semi
sgb100n025 sgp100n025 sgw100n025.pdf pdf_icon

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N025 Rev. 1.1 Jul. 2021 www.supersemi.com.cn SGB100N025/SGP100N025/SGW100N025 100V N-Channel MOSFET Description Features VDS 100V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 180A that is uniquely optimized to provide the most ef

Другие IGBT... SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 , RJP63K2DPP-M0 , SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 , SGB20N60 , SGW20N60 , SGB30N60 , SGW30N60 .