SGW10N60A IGBT. Datasheet pdf. Equivalent
Type Designator: SGW10N60A
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 92 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 62 pF
Package: TO247
SGW10N60A Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGW10N60A Datasheet (PDF)
sgp10n60a sgw10n60a rev2.pdf
SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b
sgw10n60a.pdf
SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b
sgp10n60a sgw10n60a rev2 5g.pdf
SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b
sgw10n60rufd.pdf
CO-PAK IGBT SGW10N60RUFDFEATURESD2-PAK* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 42nS (Typ)CAPPLICATIONS* AC & DC Motor controlsG* General Purpose Inverters* Robotics , Servo Controls* Power Supply E* Lamp BallastABSOLUTE MAXIMUM RATING
sgb100n025 sgp100n025 sgw100n025.pdf
SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSG*100N025Rev. 1.1Jul. 2021www.supersemi.com.cnSGB100N025/SGP100N025/SGW100N025100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 180Athat is uniquely optimized to provide the most ef
Datasheet: SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 , SGB10N60A , SGW25N120 , FGH40N60UFD , SGB15N60 , SGW15N60 , SGB20N60 , SGW20N60 , SGB30N60 , SGW30N60 , SGP02N60 , SGP04N60 .
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