SGP04N60 Datasheet. Specs and Replacement
Type Designator: SGP04N60 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 9.4 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 29 pF
Package: TO220
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SGP04N60 datasheet
sgp04n60.pdf
SGP04N60 SGD04N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for - Motor controls G E - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-25... See More ⇒
sgp04n60 sgd04n60g.pdf
SGP04N60 SGD04N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for - Motor controls G E - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-25... See More ⇒
Specs: SGW10N60A, SGB15N60, SGW15N60, SGB20N60, SGW20N60, SGB30N60, SGW30N60, SGP02N60, GT50JR22, SGP06N60, SGP15N60, SGP20N60, SGP30N60, SGI02N120, SGP02N120, SGP07N120, SGP15N120
Keywords - SGP04N60 transistor spec
SGP04N60 cross reference
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History: RJH30E2DPP | RJH60M5DPQ-A0
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