All IGBT. GT40M301 Datasheet

 

GT40M301 IGBT. Datasheet pdf. Equivalent


   Type Designator: GT40M301
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: TO264

 GT40M301 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT40M301 Datasheet (PDF)

 ..1. Size:259K  toshiba
 gt40m301.pdf

GT40M301 GT40M301

GT40M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 Unit: mmHIGH POWER SWITCHING APPLICATIONS The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : t = 0.25s (TYP.) fFRD : trr = 0.7s (TYP.) Low Saturation Voltage : V = 3.4V (MAX.) CE (sat)MAXIMUM RATINGS (Ta = 25C) CHARACTE

 9.1. Size:327K  toshiba
 gt40m101.pdf

GT40M301 GT40M301

GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT40M101 Unit: mmHIGH POWER SWITCHING APPLICATIONS High input impedance High speed : tf = 0.4s (Max.) Low saturation voltage : VCE(sat) = 3.4V (Max.) Enhancement mode type MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 900 VGate-Emitter Voltage V

Datasheet: GT25H101 , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , FGH60N60SFD , GT40T301 , GT50G101 , GT50G102 , GT50J101 , GT50J102 , GT50J301 , GT50J322 , GT50L101 .

 

 
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