GT50G101 Datasheet and Replacement

   Type Designator: GT50G101
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 8(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: TO3P
      - IGBT Cross-Reference