IRG4BC10SD-L PDF and Equivalents Search

 

IRG4BC10SD-L Specs and Replacement

Type Designator: IRG4BC10SD-L

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 38 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 14 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.58 V @25℃

tr ⓘ - Rise Time, typ: 32 nS

Coesⓘ - Output Capacitance, typ: 30 pF

Package: TO262

 IRG4BC10SD-L Substitution

- IGBT ⓘ Cross-Reference Search

 

IRG4BC10SD-L datasheet

 ..1. Size:220K  international rectifier
irg4bc10sd-l.pdf pdf_icon

IRG4BC10SD-L

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C Extremely low voltage drop 1.1Vtyp. @ 2A S-Series Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distrib... See More ⇒

 3.1. Size:220K  international rectifier
irg4bc10sd-s.pdf pdf_icon

IRG4BC10SD-L

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C Extremely low voltage drop 1.1Vtyp. @ 2A S-Series Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distrib... See More ⇒

 4.1. Size:314K  international rectifier
irg4bc10sd.pdf pdf_icon

IRG4BC10SD-L

PD -91784B IRG4BC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Extremely low voltage drop 1.1Vtyp. @ 2A VCES = 600V S-Series Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distribution G IGB... See More ⇒

 5.1. Size:267K  international rectifier
irg4bc10s.pdf pdf_icon

IRG4BC10SD-L

PD - 91786B IRG4BC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Extremely low voltage drop; 1.1V typical at 2A S-Speed Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in VCE(on) typ. = 1.10V Chopper Applications G Very Tight Vce(on) distribution Indust... See More ⇒

Specs: AUIRGPS4067D1 , AUIRGR4045D , SIW50N65G2H2G , AUIRGS30B60K , SIW50N65G2L2G , SIW75N65G2H2A , AUIRGSL30B60K , AUIRGU4045D , IXRH40N120 , IRG4BC10SD-S , IRG4BC15MD , IRG4BC15UD , IRG4BC15UD-L , IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S .

Keywords - IRG4BC10SD-L transistor spec

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