Справочник IGBT. IRG4BC10SD-L

 

IRG4BC10SD-L - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IRG4BC10SD-L
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 38 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 14 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.58 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 32 nS
   Coesⓘ - Выходная емкость, типовая: 30 pF
   Qgⓘ - Общий заряд затвора, typ: 15 nC
   Тип корпуса: TO262

 Аналог (замена) для IRG4BC10SD-L

 

 

IRG4BC10SD-L Datasheet (PDF)

 ..1. Size:220K  international rectifier
 irg4bc10sd-l.pdf

IRG4BC10SD-L IRG4BC10SD-L

PD - 94255IRG4BC10SD-SIRG4BC10SD-LINSULATED GATE BIPOLAR TRANSISTOR WITH Standard SpeedULTRAFAST SOFT RECOVERY DIODECoPack IGBTFeaturesC Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

 3.1. Size:220K  international rectifier
 irg4bc10sd-s.pdf

IRG4BC10SD-L IRG4BC10SD-L

PD - 94255IRG4BC10SD-SIRG4BC10SD-LINSULATED GATE BIPOLAR TRANSISTOR WITH Standard SpeedULTRAFAST SOFT RECOVERY DIODECoPack IGBTFeaturesC Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

 4.1. Size:314K  international rectifier
 irg4bc10sd.pdf

IRG4BC10SD-L IRG4BC10SD-L

PD -91784BIRG4BC10SD Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHIGBTULTRAFAST SOFT RECOVERY DIODECFeatures Extremely low voltage drop 1.1Vtyp. @ 2AVCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distribution G IGB

 5.1. Size:267K  international rectifier
 irg4bc10s.pdf

IRG4BC10SD-L IRG4BC10SD-L

PD - 91786BIRG4BC10S Standard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Extremely low voltage drop; 1.1V typical at 2A S-Speed: Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz inVCE(on) typ. = 1.10V Chopper Applications G Very Tight Vce(on) distribution Indust

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