IRG4BC15UD-S Specs and Replacement
Type Designator: IRG4BC15UD-S
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 49 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 14 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.02 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 37 pF
Package: D2PAK
IRG4BC15UD-S Substitution - IGBT ⓘ Cross-Reference Search
IRG4BC15UD-S datasheet
irg4bc15ud-s.pdf
PD - 94083A IRG4BC15UD-S IRG4BC15UD-L INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V UltraFast Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recovery G antiparallel diode Industry standard D2Pak & TO-262 packages @VGE = 15V,... See More ⇒
irg4bc15ud-l.pdf
PD - 94083A IRG4BC15UD-S IRG4BC15UD-L INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V UltraFast Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recovery G antiparallel diode Industry standard D2Pak & TO-262 packages @VGE = 15V,... See More ⇒
irg4bc15ud.pdf
PD - 94082A IRG4BC15UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V UltraFast Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recovery G antiparallel diode Industry standard TO-220AB package @VGE = 15V, IC = 7.8A E n-channe... See More ⇒
irg4bc15md.pdf
PD- 94151A IRG4BC15MD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH Fast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Rugged 10 sec short circuit capable at VGS = 15V VCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT co-packaged with ultra-soft-recovery anti-parallel diodes VCE(on) typ. = 1.88V G Indus... See More ⇒
Specs: SIW75N65G2H2A , AUIRGSL30B60K , AUIRGU4045D , IRG4BC10SD-L , IRG4BC10SD-S , IRG4BC15MD , IRG4BC15UD , IRG4BC15UD-L , GT30J122 , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 , IRG4BC30FD-S , IRG4BC30S-S , IRG4BC30U-S .
History: HGTP10N50C1
Keywords - IRG4BC15UD-S transistor spec
IRG4BC15UD-S cross reference
IRG4BC15UD-S equivalent finder
IRG4BC15UD-S lookup
IRG4BC15UD-S substitution
IRG4BC15UD-S replacement
History: HGTP10N50C1
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