GT50G102 Specs and Replacement
Type Designator: GT50G102
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 8(max) V @25℃
Package: TO3P
GT50G102 Substitution - IGBT ⓘ Cross-Reference Search
GT50G102 datasheet
Specs: GT25Q301, GT30J301, GT30J311, GT30J322, GT40M101, GT40M301, GT40T301, GT50G101, IRG7IC28U, GT50J101, GT50J102, GT50J301, GT50J322, GT50L101, GT50M101, GT50Q101, GT50S101
Keywords - GT50G102 transistor spec
GT50G102 cross reference
GT50G102 equivalent finder
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