GT50G102 Datasheet and Replacement
Type Designator: GT50G102
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 8(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Package: TO3P
GT50G102 Datasheet (PDF)
Datasheet: GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 , GT40T301 , GT50G101 , IRGP4063D , GT50J101 , GT50J102 , GT50J301 , GT50J322 , GT50L101 , GT50M101 , GT50Q101 , GT50S101 .
History: IXYR100N120C3 | FF150R12KS4
Keywords - GT50G102 transistor datasheet
GT50G102 cross reference
GT50G102 equivalent finder
GT50G102 lookup
GT50G102 substitution
GT50G102 replacement
History: IXYR100N120C3 | FF150R12KS4



LIST
Last Update
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
irf540 equivalent | mp1620 transistor equivalent | 2sc945 transistor | c2073 transistor | ac176 transistor | mpsa20 | irfp264 | ksc2690