All IGBT. GT50G102 Datasheet

 

GT50G102 Datasheet and Replacement


   Type Designator: GT50G102
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 8(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: TO3P
      - IGBT Cross-Reference

 

GT50G102 Datasheet (PDF)

 ..1. Size:151K  toshiba
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GT50G102

 7.1. Size:287K  toshiba
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GT50G102

Datasheet: GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 , GT40T301 , GT50G101 , IRGP4063D , GT50J101 , GT50J102 , GT50J301 , GT50J322 , GT50L101 , GT50M101 , GT50Q101 , GT50S101 .

History: IXYR100N120C3 | FF150R12KS4

Keywords - GT50G102 transistor datasheet

 GT50G102 cross reference
 GT50G102 equivalent finder
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