IRG4BC30FD1 Specs and Replacement
Type Designator: IRG4BC30FD1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 31 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.59 V @25℃
tr ⓘ - Rise Time, typ: 24 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Package: TO220AB
IRG4BC30FD1 Substitution - IGBT ⓘ Cross-Reference Search
IRG4BC30FD1 datasheet
irg4bc30fd1.pdf
PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH C HYPERFAST DIODE VCES = 600V Features Fast optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). VCE(on) typ. = 1.59V G Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than @VGE = 15V, IC = 17A Generation 3. ... See More ⇒
irg4bc30fd.pdf
PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighter G parameter distribution and hig... See More ⇒
irg4bc30fd-s.pdf
PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH C HYPERFAST DIODE VCES = 600V Features VCE(on) typ. = 1.59V Fast optimized for medium operating frequencies G (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter @VGE = 15V, IC = 17A E parameter distribution and higher efficiency than Generation... See More ⇒
irg4bc30f.pdf
D I I T I T D T I T I T Features C Features Features Features Features Fast optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VG... See More ⇒
Specs: IRG4BC15MD , IRG4BC15UD , IRG4BC15UD-L , IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG7S313U , IRG4BC30FD-S , IRG4BC30S-S , IRG4BC30U-S , IRG4BC40WL , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD .
Keywords - IRG4BC30FD1 transistor spec
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