IRG4BC30FD1 - аналоги, параметры транзистора - Справочник транзисторов

IRG4BC30FD1 даташит

..1. Size:365K international rectifier
irg4bc30fd1.pdf pdf_icon

PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH C HYPERFAST DIODE VCES = 600V Features Fast optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). VCE(on) typ. = 1.59V G Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than @VGE = 15V, IC = 17A Generation 3.

4.1. Size:302K international rectifier
irg4bc30fd.pdf pdf_icon

PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighter G parameter distribution and hig

4.2. Size:1260K international rectifier
irg4bc30fd-s.pdf pdf_icon

PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH C HYPERFAST DIODE VCES = 600V Features VCE(on) typ. = 1.59V Fast optimized for medium operating frequencies G (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter @VGE = 15V, IC = 17A E parameter distribution and higher efficiency than Generation

5.1. Size:172K international rectifier
irg4bc30f.pdf pdf_icon

D I I T I T D T I T I T Features C Features Features Features Features Fast optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VG

Другие IGBT... IRG4BC15MD , IRG4BC15UD , IRG4BC15UD-L , IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG7S313U , IRG4BC30FD-S , IRG4BC30S-S , IRG4BC30U-S , IRG4BC40WL , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD .