All IGBT. IRG4PH50S-E Datasheet

 

IRG4PH50S-E IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4PH50S-E
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 200
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 57
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.47
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 29
   Collector Capacity (Cc), typ, pF: 160
   Total Gate Charge (Qg), typ, nC: 167
   Package: TO247

 IRG4PH50S-E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4PH50S-E Datasheet (PDF)

 ..1. Size:220K  international rectifier
 irg4ph50s-e.pdf

IRG4PH50S-E IRG4PH50S-E

PD -96225IRG4PH50S-EPbFINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Standard: Optimized for minimum saturationVCES =1200V voltage and low operating frequencies (

 5.1. Size:126K  international rectifier
 irg4ph50s.pdf

IRG4PH50S-E IRG4PH50S-E

PD -91712AIRG4PH50SI T D T I T I T I TFeaturesFeaturesFeaturesFeaturesFeaturesC Standard: Optimized for minimum saturationVCES =1200V voltage and low operating frequencies (

 5.2. Size:295K  international rectifier
 auirg4ph50s.pdf

IRG4PH50S-E IRG4PH50S-E

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

 5.3. Size:280K  infineon
 auirg4ph50s.pdf

IRG4PH50S-E IRG4PH50S-E

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

Datasheet: IRG4IBC10UD , IRG4IBC30S , IRG4PC20U , IRG4PC50F-E , IRG4PC50SD , IRG4PC60F , IRG4PC60U-P , IRG4PH40UD2-E , IXGH60N60 , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , IRG6B330UD , IRG6I320U , IRG6I330U , IRG6IC30U , IRG6S320U .

 

 
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