IRG4PH50S-E - аналоги и описание IGBT

PD -96225 IRG4PH50S-EPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Standard Optimized for minimum saturation VCES =1200V voltage and low operating frequencies (

PD -91712A IRG4PH50S I T D T I T I T I T Features Features Features Features Features C Standard Optimized for minimum saturation VCES =1200V voltage and low operating frequencies (

AUTOMOTIVE GRADE AUIRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V Features IC = 81A@ TC = 100 C Standard Optimized for minimum saturation G voltage and low operating frequencies (

PD- 91575B IRG4PH50KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V VCE(on) typ. = 2.77V Combines low conduction losses with high G switching speed

PD- 95189 IRG4PH50KDPbF Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features C High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.77V G switching speed Tighter parameter distribution a

PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.78V New IGBT design provides tighter G parameter distribution and higher efficiency than previous gener

PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.78V New IGBT design provides tighter G parameter distribution and hi

PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter VCE(on) typ. = 2.78V G parameter distribution and higher efficiency than previous gener

PD - 9.1576 IRG4PH50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V, TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.77V switching speed G Latest generation design provides tighter @VGE = 15V, IC = 24A E parameter distr