All IGBT. IRG6S330U Datasheet

 

IRG6S330U IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG6S330U
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 160 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 32 nS
   Coesⓘ - Output Capacitance, typ: 108 pF
   Qgⓘ - Total Gate Charge, typ: 86 nC
   Package: D2PAK

 IRG6S330U Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG6S330U Datasheet (PDF)

 ..1. Size:232K  international rectifier
 irg6s330u.pdf

IRG6S330U IRG6S330U

PD - 96217APDP TRENCH IGBTIRG6S330UPbFKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 70Al Optimized for Sustain and Energy Recovery 1.80 Vcircuits in PDP applicationsIRP max @ TC= 25C250 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L

 8.1. Size:287K  international rectifier
 irg6s320u.pdf

IRG6S330U IRG6S330U

PD -96218APDP TRENCH IGBTIRG6S320UPbFKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 24A1.45 Vcircuits in PDP applicationsIRP max @ TC= 25C160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L

Datasheet: IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , IRG6B330UD , IRG6I320U , IRG6I330U , IRG6IC30U , IRG6S320U , RJP63F3DPP-M0 , IRG7I313U , IRG7I319U , IRG7IA13U , IRG7IA19U , IRG7IC28U , IRG7P313U , IRG7PA19U , IRG7PC28U .

 

 
Back to Top