All IGBT. IRG7PH35UD Datasheet

 

IRG7PH35UD IGBT. Datasheet pdf. Equivalent

Type Designator: IRG7PH35UD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 180W

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.20V

Maximum Collector Current |Ic|, A: 50A

Package: TO247

IRG7PH35UD Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG7PH35UD PDF doc:

1.1. irg7ph35u.pdf Size:374K _igbt_a

IRG7PH35UD
IRG7PH35UD

PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C I NOMINAL = 20A • Square RBSOA • 100% of the parts tested for ILM G TJ(max) = 175°C • Positive VCE (ON) temperature co-efficient • Tight parameter distribution E VCE(on)

1.2. irg7ph35ud1m.pdf Size:300K _igbt_a

IRG7PH35UD
IRG7PH35UD

IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C • Low VCE (ON) trench IGBT Technology VCES = 1200V • Low Switching Losses • Square RBSOA IC = 25A, TC = 100°C • Ultra-Low VF Diode • 1300Vpk Repetitive Transient Capacity G TJ(max) = 150°C • 100% of the Parts Tested for ILM •

1.3. irg7ph35u-ep.pdf Size:374K _igbt_a

IRG7PH35UD
IRG7PH35UD

PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C I NOMINAL = 20A • Square RBSOA • 100% of the parts tested for ILM G TJ(max) = 175°C • Positive VCE (ON) temperature co-efficient • Tight parameter distribution E VCE(on)

1.4. irg7ph35ud1.pdf Size:326K _igbt_a

IRG7PH35UD
IRG7PH35UD

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V • Low VCE (ON) trench IGBT Technology • Low Switching Losses I NOMINAL = 20A • Square RBSOA • Ultra-Low VF Diode G TJ(max) = 150°C • 1300Vpk Repetitive Transient Capacity • 100% of the Parts Tested for I

1.5. irg7ph35ud.pdf Size:461K _igbt_a

IRG7PH35UD
IRG7PH35UD

PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Square RBSOA I NOMINAL = 20A • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient G TJ(max) = 150°C • Ultra fast soft recovery co-pak diode • T

1.6. irg7ph35ud1-ep.pdf Size:326K _igbt_a

IRG7PH35UD
IRG7PH35UD

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V • Low VCE (ON) trench IGBT Technology • Low Switching Losses I NOMINAL = 20A • Square RBSOA • Ultra-Low VF Diode G TJ(max) = 150°C • 1300Vpk Repetitive Transient Capacity • 100% of the Parts Tested for I

Datasheet: IRG7IA19U , IRG7IC28U , IRG7P313U , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D , IRG7PH35U , IRG4PC50U , IRG7PH35UD1 , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD , IRG7PH50U , IRG7PH50U-E .

 


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