All IGBT. IRG7PH35UD1 Datasheet

 

IRG7PH35UD1 Datasheet and Replacement


   Type Designator: IRG7PH35UD1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 179 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 120 pF
   Package: TO247

 IRG7PH35UD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7PH35UD1 Datasheet (PDF)

 ..1. Size:326K  international rectifier
 irg7ph35ud1.pdf pdf_icon

IRG7PH35UD1

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching Losses I NOMINAL = 20A Square RBSOA Ultra-Low VF Diode G TJ(max) = 150 C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I... See More ⇒

 0.1. Size:300K  international rectifier
 irg7ph35ud1m.pdf pdf_icon

IRG7PH35UD1

IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT Technology VCES = 1200V Low Switching Losses Square RBSOA IC = 25A, TC = 100 C Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity G TJ(max) = 150 C 100% of the Parts Tested for ILM ... See More ⇒

 0.2. Size:326K  international rectifier
 irg7ph35ud1-ep.pdf pdf_icon

IRG7PH35UD1

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching Losses I NOMINAL = 20A Square RBSOA Ultra-Low VF Diode G TJ(max) = 150 C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I... See More ⇒

 4.1. Size:462K  international rectifier
 irg7ph35udpbf irg7ph35ud-ep.pdf pdf_icon

IRG7PH35UD1

PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode T... See More ⇒

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Datasheet: IRG7IC28U , IRG7P313U , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D , IRG7PH35U , IRG7PH35UD , MBQ50T65FDSC , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD , IRG7PH50U , IRG7PH50U-EP , IRG7PSH50UD .

Keywords - IRG7PH35UD1 transistor datasheet

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