Справочник IGBT. IRG7PH35UD1

 

IRG7PH35UD1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG7PH35UD1

Тип транзистора: IGBT

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 179

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200

Максимальный постоянный ток коллектора |Ic| @25℃, A: 50

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.2

Тип корпуса: TO247

Аналог (замена) для IRG7PH35UD1

 

 

IRG7PH35UD1 Datasheet (PDF)

 ..1. Size:326K  international rectifier
irg7ph35ud1.pdf

IRG7PH35UD1 IRG7PH35UD1

IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I

 0.1. Size:300K  international rectifier
irg7ph35ud1m.pdf

IRG7PH35UD1 IRG7PH35UD1

IRG7PH35UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT TechnologyVCES = 1200V Low Switching Losses Square RBSOAIC = 25A, TC = 100C Ultra-Low VF Diode 1300Vpk Repetitive Transient CapacityGTJ(max) = 150C 100% of the Parts Tested for ILM

 0.2. Size:326K  international rectifier
irg7ph35ud1-ep.pdf

IRG7PH35UD1 IRG7PH35UD1

IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I

 4.1. Size:461K  international rectifier
irg7ph35ud.pdf

IRG7PH35UD1 IRG7PH35UD1

PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T

 4.2. Size:462K  infineon
irg7ph35udpbf irg7ph35ud-ep.pdf

IRG7PH35UD1 IRG7PH35UD1

PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T

Другие IGBT... IRG7IC28U , IRG7P313U , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D , IRG7PH35U , IRG7PH35UD , IRGP4066D , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD , IRG7PH50U , IRG7PH50U-E , IRG7PSH50UD .

 

 
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