All IGBT. IRG7S319U Datasheet

 

IRG7S319U IGBT. Datasheet pdf. Equivalent

Type Designator: IRG7S319U

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 96W

Maximum Collector-Emitter Voltage |Vce|, V: 330V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.43V

Maximum Collector Current |Ic|, A: 45A

Package: D2Pak

IRG7S319U Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7S319U Datasheet (PDF)

1.1. irg7s319u.pdf Size:244K _igbt_a

IRG7S319U
IRG7S319U

PD - 97155 IRG7S319UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.26 V circuits in PDP applications IRP max @ TC= 25°C 170 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l Lead

3.1. irg7s313u.pdf Size:244K _igbt_a

IRG7S319U
IRG7S319U

PD - 97402A IRG7S313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP applications IRP max @ TC= 25°C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l Lead

5.1. irg7sc12f.pdf Size:252K _igbt_a

IRG7S319U
IRG7S319U

PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features VCES = 600V • Low VCE (ON) Trench IGBT Technology • Maximum Junction temperature 150 °C IC = 8A, TC = 100°C • 3 μS short circuit SOA • Square RBSOA G tSC ≥ 3μs, TJ(max) = 150°C • Positive VCE (ON) Temperature co-efficient E • Tight parameter distribution VCE(on) typ. = 1.60V • Lead Free Pac

5.2. irg7sc28u.pdf Size:213K _igbt_a

IRG7S319U
IRG7S319U

PD - 97569A PDP TRENCH IGBT IRG7SC28UPbF Key Parameters Features VCE min 600 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 40A 1.70 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25°C 225 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l

Datasheet: IRG7PH46U , IRG7PH46UD , IRG7PH50U , IRG7PH50U-E , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , IRG7S313U , RJP30E2DPP-M0 , IRG7SC12F , IRG7SC28U , IRGB10B60KD , IRGB14C40L , IRGB15B60KD , IRGB20B60PD1 , IRGB30B60K , IRGB4045D .

 


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