IRGB15B60KD Datasheet. Specs and Replacement

Type Designator: IRGB15B60KD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 208 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 31 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Coesⓘ - Output Capacitance, typ: 75 pF

Package: TO220AB

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IRGB15B60KD datasheet

 ..1. Size:332K  international rectifier
 irgb15b60kd.pdf pdf_icon

IRGB15B60KD

PD - 95194 IRGB15B60KDPbF IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 15A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive V... See More ⇒

 9.1. Size:160K  international rectifier
 irgb14c40l.pdf pdf_icon

IRGB15B60KD

IRGS14C40L IRGSL14C40L Ignition IGBT IRGB14C40L IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector CES = C C CE(on) R1 Gate R2 L(min) ... See More ⇒

 9.2. Size:111K  international rectifier
 irgb10b60kd.pdf pdf_icon

IRGB15B60KD

PD - 94925 IRGB10B60KDPbF IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 12A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10 s, TJ=150 C Positive V... See More ⇒

Specs: IRG7PSH73K10, IRG7R313U, IRG7S313U, IRG7S319U, IRG7SC12F, IRG7SC28U, IRGB10B60KD, IRGB14C40L, FGH60N60SFD, IRGB20B60PD1, IRGB30B60K, IRGB4045D, IRGB4056D, IRGB4059D, IRGB4060D, IRGB4061D, IRGB4062D

Keywords - IRGB15B60KD transistor spec

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