GT50M101 Datasheet and Replacement
Type Designator: GT50M101
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 180 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 250 nS
Package: TO264
GT50M101 substitution
GT50M101 Datasheet (PDF)
Datasheet: GT40T301 , GT50G101 , GT50G102 , GT50J101 , GT50J102 , GT50J301 , GT50J322 , GT50L101 , SGT40N60FD2PN , GT50Q101 , GT50S101 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB .
History: IRG4BC30U-S
Keywords - GT50M101 transistor datasheet
GT50M101 cross reference
GT50M101 equivalent finder
GT50M101 lookup
GT50M101 substitution
GT50M101 replacement
History: IRG4BC30U-S
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