GT50M101 Specs and Replacement
Type Designator: GT50M101
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 180 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Package: TO264
GT50M101 Substitution - IGBT ⓘ Cross-Reference Search
GT50M101 datasheet
Specs: GT40T301, GT50G101, GT50G102, GT50J101, GT50J102, GT50J301, GT50J322, GT50L101, SGT40N60FD2PN, GT50Q101, GT50S101, GT50T101, GT5G101, GT5G102, GT5G102LB, GT5G103, GT5G103LB
Keywords - GT50M101 transistor spec
GT50M101 cross reference
GT50M101 equivalent finder
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GT50M101 substitution
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History: GT50T101
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