GT50M101 Datasheet and Replacement
Type Designator: GT50M101
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 180 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 250 nS
Package: TO264
- IGBT Cross-Reference
GT50M101 Datasheet (PDF)
Datasheet: GT40T301 , GT50G101 , GT50G102 , GT50J101 , GT50J102 , GT50J301 , GT50J322 , GT50L101 , CRG60T60AN3H , GT50Q101 , GT50S101 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB .
History: IXXH100N60B3
Keywords - GT50M101 transistor datasheet
GT50M101 cross reference
GT50M101 equivalent finder
GT50M101 lookup
GT50M101 substitution
GT50M101 replacement
History: IXXH100N60B3
LIST
Last Update
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
irfp264 | ksc2690 | bc546 datasheet | mpsa06 transistor | tta004b | 2sc1116 | 2n3565 equivalent | 10n60