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IRGB4059D Spec and Replacement


   Type Designator: IRGB4059D
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 56 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 8 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 10 nS
   Coesⓘ - Output Capacitance, typ: 25 pF
   Package: TO220AB

 IRGB4059D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGB4059D specs

 ..1. Size:290K  international rectifier
 irgb4059d.pdf pdf_icon

IRGB4059D

PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 4.0A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tsc > 5 s, Tjmax = 175 C Maximum Junction temperature 175 C 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.75V n-channel 100% of The Parts Tested for 4X Rat... See More ⇒

 0.1. Size:290K  international rectifier
 irgb4059dpbf.pdf pdf_icon

IRGB4059D

PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 4.0A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tsc > 5 s, Tjmax = 175 C Maximum Junction temperature 175 C 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.75V n-channel 100% of The Parts Tested for 4X Rat... See More ⇒

 7.1. Size:351K  international rectifier
 irgb4056d.pdf pdf_icon

IRGB4059D

PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 12A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated current (ILM) ... See More ⇒

 7.2. Size:353K  international rectifier
 irgb4056dpbf.pdf pdf_icon

IRGB4059D

PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 12A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated current (ILM) ... See More ⇒

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Specs: IRG7SC28U , IRGB10B60KD , IRGB14C40L , IRGB15B60KD , IRGB20B60PD1 , IRGB30B60K , IRGB4045D , IRGB4056D , SGT60U65FD1PT , IRGB4060D , IRGB4061D , IRGB4062D , IRGB4064D , IRGB4086 , IRGB4B60K , IRGB4B60KD1 , IRGB5B120KD .

Keywords - IRGB4059D transistor spec

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