Справочник IGBT. IRGB4059D

 

IRGB4059D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRGB4059D

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 56

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.05

Максимальный постоянный ток коллектора (Ic): 8

Тип корпуса: TO220AB

Аналог (замена) для IRGB4059D

 

 

IRGB4059D Datasheet (PDF)

0.1. irgb4059d.pdf Size:290K _international_rectifier

IRGB4059D
IRGB4059D

PD - 97072AIRGB4059DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 4.0A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtsc > 5s, Tjmax = 175C Maximum Junction temperature 175 C 5s SCSOAE Square RBSOAVCE(on) typ. = 1.75Vn-channel 100% of The Parts Tested for 4X Rat

0.2. irgb4059dpbf.pdf Size:290K _international_rectifier

IRGB4059D
IRGB4059D

PD - 97072AIRGB4059DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 4.0A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtsc > 5s, Tjmax = 175C Maximum Junction temperature 175 C 5s SCSOAE Square RBSOAVCE(on) typ. = 1.75Vn-channel 100% of The Parts Tested for 4X Rat

 7.1. irgb4056d.pdf Size:351K _international_rectifier

IRGB4059D
IRGB4059D

PD - 97188AIRGB4056DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 12A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)

Другие IGBT... IRG7SC28U , IRGB10B60KD , IRGB14C40L , IRGB15B60KD , IRGB20B60PD1 , IRGB30B60K , IRGB4045D , IRGB4056D , GT60M301 , IRGB4060D , IRGB4061D , IRGB4062D , IRGB4064D , IRGB4086 , IRGB4B60K , IRGB4B60KD1 , IRGB5B120KD .

 

 
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